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Measurement of the d(36) coefficient of mercury cadmium telluride by reflection second harmonic generation

机译:反射二次谐波法测量碲化汞镉的d(36)系数

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摘要

The second order nonlinear coefficient (d36) of the narrow band gap semiconductor, mercury cadmium telluride (MCT), is measured. Because MCT is strongly absorbing at a 1.06 μm wavelength, the measurement was performed by comparing the second harmonic intensity reflected from the material surface to the second harmonic intensity measured for a quartz sample in transmission. The analysis depends on the derivation of comparable expressions for the reflected and transmitted intensities. Using this approach a value of d36=350±40 pm/V is obtained, a value much larger than those reported for similar zinc-blende type materials. The large magnitude of the MCT d36 is attributed to an electronic resonance enhancement.
机译:测量了窄带隙半导体的二阶非线性系数(d36),即碲化汞镉(MCT)。由于MCT在1.06μm波长处有很强的吸收性,因此通过比较从材料表面反射的二次谐波强度与透射石英样品的二次谐波强度进行测量。该分析取决于反射和透射强度的可比表达式的推导。使用这种方法,可获得d36 = 350±40350pm / V的值,该值比类似的闪锌矿型材料报道的值大得多。 MCT d36的大幅度归因于电子共振的增强。

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